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September 7, 2006

Campbell, SA -- ECE, Gladfelter, WL -- Chem

Campbell contact info; Gladfelter contact info;
Authors:
Zhong, LJ; Daniel, WL; Zhang, ZH; *Campbell, SA**Gladfelter, WL*
Title:
Atomic layer deposition, characterization, and dielectric properties of HfO2/SiO2 nanolaminates and comparisons with their homogeneous mixtures
Source:
CHEMICAL VAPOR DEPOSITION 12 (2-3): 143-150 MAR 2006
ISSN:
0948-1907
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May 4, 2006

Campbell, SA -- Electrical and Computer Engineering

Campbell contact info;
Authors:
Stesmans, A; Afanas'ev, VV; Chen, F; *Campbell, SA*
Title:
Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance
Source:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 7 (4-6): 197-202 2004
ISSN:
1369-8001
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Campbell, SA -- Electrical and Computer Engineering

Campbell contact info;
Authors:
Zhang, Z; Li, M; *Campbell, SA*
Title:
Effects of annealing on charge in HfO2 gate stacks
Source:
IEEE ELECTRON DEVICE LETTERS 26 (1): 20-22 2005
ISSN:
0741-3106
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Carter, CB -- CEMS, Campbell, SA -- Elec. & Comp. Eng., Kortshagen, U -- Mech. Eng.

Carter contact info; Campbell contact info; Kortshagen contact info;
Authors:
Bapat, A; Anderson, C; Perrey, CR; *Carter, CB**Campbell, SA**Kortshagen, U*
Title:
Plasma synthesis of single-crystal silicon nanoparticles for novel electronic device applications
Source:
PLASMA PHYSICS AND CONTROLLED FUSION 46 : B97-B109 2004
ISSN:
0741-3335
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May 2, 2006

Campbell, SA -- Electrical and Computer Engineering

Campbell contact info;
Authors:
Fedorenko, YG; Truong, L; Afanas'ev, VV; Stesmans, A; Zhang, Z; *Campbell, SA*
Title:
Impact of nitrogen incorporation on interface states in (100)Si/HfO2
Source:
MICROELECTRONICS RELIABILITY 45 (5-6): 802-805 2005
ISSN:
0026-2714
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April 30, 2006

Campbell, SA -- Electrical and Computer Engineering

Campbell contact info;
Authors:
Zhang, ZH; Li, M; *Campbell, SA*
Title:
A study on charge reduction in HfO2 gate stacks
Source:
IEEE TRANSACTIONS ON ELECTRON DEVICES 52 (8): 1839-1844 2005
ISSN:
0018-9383
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Campbell, SA (ECE); Gladfelter, WL (Chem)

Campbell contact info; Gladfelter contact info;
Authors:
Li, M; Zhang, Z; *Campbell, SA**Gladfelter, WL*;  Agustin, MP; Klenov, DO; Stemmer, S; 
Title:
Electrical and material characterizations of high-permittivity HfxTi1-xO2 gate insulators
Source:
JOURNAL OF APPLIED PHYSICS 98 (5): 054506 2005
ISSN:
0021-8979
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Campbell, SA -- Electrical and Computer Engineering

Campbell contact info;
Authors:
Fedorenko, YG; Truong, L; Afanas'ev, VV; Stesmans, A; Zhang, Z; *Campbell, SA*
Title:
Impact of nitrogen incorporation on interface states in (100)Si/HfO2
Source:
JOURNAL OF APPLIED PHYSICS 98 (12): 123703 2005
ISSN:
0021-8979
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